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| Hyper 3 mm (T1) LED, Diffused Hyper-Bright, Wide-Angle LED LS 3386, LA 3386, LO 3386 LY 3386 Besondere Merkmale q q q q q q eingefarbtes, diffuses Gehause zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839 Features q q q q q q colored, diffused package optical coupling into light pipes for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Semiconductor Group 1 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 20 mA IV (mcd) 10 16 25 40 16 16 25 40 63 25 16 25 40 63 25 16 25 40 63 25 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 80 32 50 80 125 125 50 80 125 200 125 50 80 125 200 125 50 80 125 200 Bestellnummer Ordering Code LS 3386-LP LS 3386-M LS 3386-N LS 3386-P LS 3386-MQ LA 3386-MQ LA 3386-N LA 3386-P LA 3386-Q LA 3386-NR LO 3386-MQ LO 3386-N LO 3386-P LO 3386-Q LO 3386-NR LY 3386-MQ LY 3386-N LY 3386-P LY 3386-Q LY 3386-NR super-red red diffused Q62703-Q3579 Q62703-Q3581 Q62703-Q3582 Q62703-Q3709 Q62703-Q3580 Q62703-Q3886 Q62703-Q3887 Q62703-Q3888 Q62703-Q3889 Q62703-Q3890 Q62703-Q3891 Q62703-Q3892 Q62703-Q3893 Q62703-Q3894 Q62703-Q3895 Q62703-Q3896 Q62703-Q3897 Q62703-Q3898 Q62703-Q3899 Q62703-Q3900 amber orange diffused orange orange diffused yellow yellow diffused Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 2 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air 1) 1) Symbol Symbol Werte Values LS, LO, LA LY - 55... + 100 - 55... + 100 + 100 30 1 20 0.2 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 80 3 55 V mW Rth JA 500 K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. Semiconductor Group 3 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit 632 615 605 587 nm 16 16 16 15 nm 100 2.0 2.6 0.01 10 100 2.0 2.6 0.01 10 100 2.0 2.6 0.01 10 100 2.0 2.6 0.01 10 Grad deg. V V A A Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 4 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 OHL00235 V 60 yellow orange amber super-red 40 20 0 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 1.0 OHL01681 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 5 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Durchlastrom IF = f (VF) Forward current TA = 25C 10 2 mA F 5 OHL00232 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 35 OHL00248 F mA 30 25 yellow 20 15 10 1 5 10 0 10 5 5 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 0 0 20 40 60 80 C 100 A Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25C V V (20 mA) 10 1 OHL00233 Relative Lichtstarke IV / IV(25C ) = f (TA) Relative luminous intensity IF = 20 mA V 2.0 OHL00238 V (25 C) 10 0 5 1.6 1.2 10 -1 5 superred yellow orange/amber 0.8 orange yellow amber super-red 10 -2 5 0.4 orange yellow amber super-red 10 -3 -1 10 5 10 0 5 10 1 F mA 10 2 0 -20 0 20 40 60 C TA 100 Semiconductor Group 6 1998-09-18 LS 3386, LA 3386, LO 3386, LY 3386 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C 10 1 A F 5 OHL00322 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C 10 0 A 5 OHL00316 tp tp D= T F T D= 0.005 0.01 0.02 0.05 0.1 F tp tp D= T F T D= 0.005 0.01 0.02 0.05 10 0 5 0.2 10 -1 5 0.5 0.1 10 -1 5 0.2 0.5 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Area not flat 4.8 4.4 2.7 2.1 3.4 3.1 0.6 0.4 2.54 mm spacing 1.1 0.9 0.7 0.4 0.8 0.4 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Collector/ Cathode Chip position GEX06710 Kathodenkennzeichnung: Cathode mark: Kurzerer Lotspie Short solder lead Semiconductor Group 7 o2.9 o2.7 1998-09-18 |
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